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RJH65S04DPQ-A0 Datasheet, Renesas

RJH65S04DPQ-A0 igbt equivalent, igbt.

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RJH65S04DPQ-A0 Datasheet

Features and benefits


* Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)
* Built in fast recovery diode in one package
* Tren.

Application

for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; .

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and i.

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TAGS

RJH65S04DPQ-A0
IGBT
Renesas

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