RJH65S04DPQ-A0 Datasheet IGBT

Manufacturer: Renesas

Datasheet Details

Preliminary Datasheet RJH65S04DPQ-A0 650V - 50A - IGBT Application:.

Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C).
Built in fast recovery diode in one package.
Trench gate and thin wafer technology.
High speed switching tf = 80 ns typ. (at CC = 300 V, VGE = 15 V, IC = 50 A, Rg = 10 Tj = 125C, inductive load) R07DS0849EJ0001 Rev.0.01 Jul 06, 2012 Outline.