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RJK0230DPA Datasheet Silicon N Channel Power MOS FET

Manufacturer: Renesas

Overview: Preliminary Datasheet RJK0230DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0541EJ0110 High Speed Power Switching Rev.1.

Key Features

  • Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline.