RJK0328DPB-01 fet equivalent, silicon n-channel mos fet.
* High speed switching
* Capable of 4.5 V gate drive
* Low drive current
* High density mounting
* Low on-resistance
RDS(on) = 1.6 m typ. (at VGS = 1.
or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics.
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