RJK6012DPP mosfet equivalent, n-channel power mosfet.
* Low on-resistance RDS(on) = 0.77 typ. (at ID = 5 A, VGS = 10 V, Ta = 25C)
* Low leakage current
* High speed switching REJ03G1581-0200 Rev.2.00 Jun 30, 2.
or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics.
Image gallery
Download