RJK6015DPM Overview
Preliminary Datasheet RJK6015DPM 600V - 21A - MOS FET High Speed Power Switching.
RJK6015DPM Key Features
- Low on-resistance RDS(on) = 0.315 typ. (at ID = 10.5 A, VGS = 10 V, Ta = 25 C)
- Low leakage current
- High speed switching
| Part number | RJK6015DPM |
|---|---|
| Datasheet | RJK6015DPM_Renesas.pdf |
| File Size | 102.30 KB |
| Manufacturer | Renesas |
| Description | MOS FET |
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Preliminary Datasheet RJK6015DPM 600V - 21A - MOS FET High Speed Power Switching.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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RJK6015DPK | Silicon N-Channel MOSFET | Renesas Technology |
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RJK6015DPK | N-Channel MOSFET | INCHANGE |
| Part Number | Description |
|---|---|
| RJK6011DJA | High Speed Power Switching MOS FET |
| RJK6011DJE | N-Channel Power MOSFET |
| RJK6012DPE | N-Channel Power MOSFET |
| RJK6012DPP | N-Channel Power MOSFET |
| RJK6012DPP-A0 | High Speed Power Switching MOSFET |
| RJK6013DPP | N-Channel Power MOSFET |
| RJK6013DPP-E0 | N-Channel Power MOSFET |
| RJK6018DPM | MOS FET |
| RJK6002DJE | MOS FET |
| RJK6002DPE | MOS FET |