RJK6024DPE mosfet equivalent, n-channel power mosfet.
* Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25C)
* Low leakage current
* High speed switching R07DS0424EJ0200 Rev.2.00 Feb 27, 2.
or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics.
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