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RJK6024DPE N-Channel Power MOSFET

RJK6024DPE Description

Preliminary Datasheet RJK6024DPE 600V - 0.4A - MOS FET High Speed Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

RJK6024DPE Features

* Low on-resistance RDS(on) = 28  typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25C)
* Low leakage current
* High speed switching R07DS0424EJ0200 Rev.2.00 Feb 27, 2012 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Source 4. Drain 1 G 2 3 S

RJK6024DPE Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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N-Channel Power MOSFET Renesas
Renesas RJK6024DPE-like datasheet