Datasheet4U Logo Datasheet4U.com

RJK6025DPD - N-Channel Power MOSFET

General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.

Key Features

  • Low on-resistance RDS(on) = 13.5  typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25C).
  • Low drive current.
  • High density mounting R07DS0676EJ0100 Rev.1.00 Feb 17, 2012 Outline.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RJK6025DPE Silicon N Channel MOS FET High Speed Power Switching Renesas Technology
RJK6020DPK Silicon N Channel MOSFET High Speed Power Switching Renesas Technology
RJK6022DJE Silicon N Channel MOSFET High Speed Power Switching Renesas Technology
RJK6024DP3-A0 High Speed Power Switching MOS FET Renesas Technology
RJK6024DPD Silicon N Channel MOS FET High Speed Power Switching Renesas Technology

Other Datasheets by Renesas

Part Number Description
RJK6025DPH-E0 MOS FET
RJK6024DPE N-Channel Power MOSFET
RJK6026DPE Silicon N-Channel MOSFET
RJK6026DPP-E0 MOS FET
RJK6002DJE MOS FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Preliminary Datasheet RJK6025DPD 600V - 1A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 13.5  typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25C)  Low drive current  High density mounting R07DS0676EJ0100 Rev.1.00 Feb 17, 2012 Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 4 1. 2. 3. 4. Gate Drain Source Drain D G 12 3 S Absolute Maximum Ratings www.DataSheet.co.kr (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2.