• Part: RJK6025DPD
  • Description: N-Channel Power MOSFET
  • Category: MOSFET
  • Manufacturer: Renesas
  • Size: 135.74 KB
Download RJK6025DPD Datasheet PDF
Renesas
RJK6025DPD
Features - Low on-resistance RDS(on) = 13.5  typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25C) - Low drive current - High density mounting R07DS0676EJ0100 Rev.1.00 Feb 17, 2012 Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 4 1. 2. 3. 4. Gate Drain Source Drain Absolute Maximum Ratings .Data Sheet.co.kr (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tc = 25C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 Pch Note2 ch-c Tch Tstg Ratings 600 30 1 2 1 2 29.7 4.2 150 - 55 to +150 Unit V V A A A A W C/W C C R07DS0676EJ0100Rev.1.00 Feb 17, 2012 Page 1 of 6 Datasheet pdf - http://..net/ Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source...