RJK60S3DPP-E0 switching equivalent, 600v - 12a - sj mos fet high speed power switching.
* Superjunction MOSFET
* Low on-resistance
RDS(on) = 0.35 typ. (at ID = 6 A, VGS = 10 V, Ta = 25C)
* High speed switching
tf = 21 ns typ. (at ID = 6 A, VGS.
for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; .
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