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RJK60S3DPP-E0 - 600V - 12A - SJ MOS FET High Speed Power Switching

Description

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Features

  • Superjunction MOSFET.
  • Low on-resistance RDS(on) = 0.35  typ. (at ID = 6 A, VGS = 10 V, Ta = 25C).
  • High speed switching tf = 21 ns typ. (at ID = 6 A, VGS = 10 V, RL = 50 , Rg = 10 , Ta = 25C) Outline.

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Datasheet Details

Part number RJK60S3DPP-E0
Manufacturer Renesas Electronics
File Size 193.65 KB
Description 600V - 12A - SJ MOS FET High Speed Power Switching
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Preliminary Datasheet RJK60S3DPP-E0 600V - 12A - SJ MOS FET High Speed Power Switching R07DS0637EJ0300 Rev.3.00 Oct 12, 2012 Features  Superjunction MOSFET  Low on-resistance RDS(on) = 0.35  typ. (at ID = 6 A, VGS = 10 V, Ta = 25C)  High speed switching tf = 21 ns typ. (at ID = 6 A, VGS = 10 V, RL = 50 , Rg = 10 , Ta = 25C) Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) D 1. Gate G 2. Drain 3.
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