RJP1CS08DWT Datasheet IGBT

Manufacturer: Renesas

Datasheet Details

Preliminary Datasheet RJP1CS08DWT/RJP1CS08DWA 1250V - 200A - IGBT Application:.

Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 200 A, VGE = 15 V, Ta = 25C).
High speed switching.
Short circuit withstands time (10 s min. ) R07DS0831EJ0001 Rev.0.01 Jul 05, 2012 Outline Die: RJP1CS08DWT-80 2 C Wafer: RJP1CS08DWA-80 3 2 3 1G 1 3 E 3 1. Gate 2. Collector (The back) 3. Emitter 3 www. DataSheet. net/ Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 10.