RJP30E2 Features
* Trench gate technology (G5H series)
* Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ
* High speed switching tf = 150 ns typ
* Low leak current ICES = 1 μA max
* Isolated package TO-220FL Outline RENESAS Package code: PRSS0003AF-A) (Package
Datasheet Details
RJP30E2, RJP30E2DPP-M0
213.25 KB
N-channel power mosfet.
This datasheet PDF includes multiple part numbers: RJP30E2, RJP30E2DPP-M0.
Please refer to the document for exact specifications by model.
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RJP30E2 Distributor
