RJP30E2 Datasheet N-Channel Power MOSFET

Manufacturer: Renesas

Download the RJP30E2 datasheet PDF. This datasheet also includes the RJP30E2DPP-M0 variant, as both parts are published together in a single manufacturer document.

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RJP30E2 n-channel power mosfet by Renesas - Datasheet Preview — Note: The manufacturer provides a single datasheet file (RJP30E2DPP-M0_Renesas.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	RJP30E2
Manufacturer	Renesas
File Size	213.25 KB
Description	N-Channel Power MOSFET
Download	RJP30E2 Download (PDF)

Overview

RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching.

Key Features

Trench gate technology (G5H series).
Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ.
High speed switching tf = 150 ns typ.
Low leak current ICES = 1 μA max.
Isolated package TO-220FL Outline.

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