RJP30H1 Features
* Trench gate and thin wafer technology (G6H-II series)
* High speed switching: tr = 80 ns typ., tf = 150 ns typ.
* Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ.
* Low leak current: ICES = 1 A max. Outline RENESAS Package code: PRSS0004ZJ-A (Package name : TO-
Datasheet Details
RJP30H1, RJP30H1DPD
212.44 KB
N-channel igbt.
This datasheet PDF includes multiple part numbers: RJP30H1, RJP30H1DPD.
Please refer to the document for exact specifications by model.
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RJP30H1 Distributor
