RJP30H1DPP-M0
RJP30H1DPP-M0 is N-Channel IGBT manufactured by Renesas.
Preliminary Datasheet
Silicon N Channel IGBT High speed power switching
Features
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- Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low leak current: ICES = 1 A max. Isolated package TO-220FL R07DS0466EJ0200 Rev.2.00 Jun 15, 2011
Outline
RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL)
1. Gate 2. Collector 3. Emitter
2 3
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