RJP30H2DPK-M0
RJP30H2DPK-M0 is N-Channel Power MOSFET manufactured by Renesas.
Preliminary Datasheet
Silicon N Channel IGBT High speed power switching
Features
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- - Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max R07DS0467EJ0200 Rev.2.00 Jun 15, 2011
Outline
RENESAS Package code: PRSS0004ZH-A (Package name: TO-3PSG)
C 4
1. Gate 2. Collector 3. Emitter 4. Collector...
