RJP6065DPM
RJP6065DPM is N-Channel IGBT manufactured by Renesas.
Preliminary Datasheet
Silicon N Channel IGBT High Speed Power Switching
Features
- Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (IC = 40 A, VGE = 15V, Ta = 25°C)
- Gate to emitter voltage rating 30 V
- Pb-free lead plating and chip bonding R07DS0204EJ0100 Rev.1.00 Nov 19, 2010
Outline
RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM)
1. Gate 2. Collector 3. Emitter
E 1 2
.DataSheet.co.kr...
