Datasheet4U.com

RJP60F0DPE - N-Channel IGBT

Product Overview

Renesas

📥 Download Datasheet

RJP60F0DPE N-Channel IGBT by Renesas - Datasheet Preview — Datasheet preview – RJP60F0DPE

Datasheet Details

Part number	RJP60F0DPE
Manufacturer	Renesas
File Size	142.80 KB
Description	N-Channel IGBT
Datasheet	RJP60F0DPE Datasheet
Additional preview pages of the RJP60F0DPE datasheet.

Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25°C).
Trench gate and thin wafer technology.
High speed switching tf = 90 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) R07DS0540EJ0100 Rev.1.00 Sep 09, 2011 Outline.

📁 Similar Datasheet

RJP6085DPK - Silicon N-Channel IGBT (Renesas Technology)
RJP6085DPN - Silicon N-Channel IGBT (Renesas Technology)
RJP60D0DPP-M0 - Silicon N-Channel IGBT (Renesas Technology)
RJP020N06 - Drive Nch MOS FET (Rohm)
RJP020N06FRA - Power MOSFET (ROHM)
RJP020N06T100 - N-Channel MOSFET (VBsemi)
RJP2557DPK - IGBT (Renesas Technology)
RJP3053DPP - IGBT (Renesas Technology)

Other Datasheets by Renesas

RJP60F0DPM - N-Channel IGBT
RJP60F4DPM - N-Channel IGBT
RJP60F5DPM - N-Channel IGBT
RJP60F7DPK - IGBT
RJP6065DPM - N-Channel IGBT
RJP60D0DPE - N-Channel IGBT

Published: May 2, 2012 |