RJP60F0DPE Description
Preliminary Datasheet RJP60F0DPE 600 V - 25 A - IGBT High Speed Power Switching.
RJP60F0DPE Key Features
- Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25°C)
- Trench gate and thin wafer technology