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RJP60F7DPK - IGBT

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Renesas

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RJP60F7DPK IGBT by Renesas - Datasheet Preview — Datasheet preview – RJP60F7DPK

Datasheet Details

Part number	RJP60F7DPK
Manufacturer	Renesas
File Size	200.97 KB
Description	IGBT
Datasheet	RJP60F7DPK Datasheet
Additional preview pages of the RJP60F7DPK datasheet.

Product details

Features

Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C).
Trench gate and thin wafer technology.
High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) Outline.

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Published: Aug 5, 2020 |