Datasheet4U Logo Datasheet4U.com

RJP60F7DPK - IGBT

Key Features

  • Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C).
  • Trench gate and thin wafer technology.
  • High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) Outline.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RJP6085DPK Silicon N-Channel IGBT Renesas Technology
RJP6085DPN Silicon N-Channel IGBT Renesas Technology
RJP60D0DPP-M0 Silicon N-Channel IGBT Renesas Technology
RJP020N06 Drive Nch MOS FET Rohm
RJP020N06FRA Power MOSFET ROHM

Other Datasheets by Renesas

Part Number Description
RJP60F0DPE N-Channel IGBT
RJP60F0DPM N-Channel IGBT
RJP60F4DPM N-Channel IGBT
RJP60F5DPM N-Channel IGBT
RJP6065DPM N-Channel IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Preliminary Datasheet RJP60F7DPK 600V - 50A - IGBT High Speed Power Switching R07DS1001EJ0100 Rev.1.00 Jan 22, 2013 Features  Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Trench gate and thin wafer technology  High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 12 3 1. Gate G 2. Collector 3. Emitter 4. Collector E Absolute Maximum Ratings Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector dissipation Junction to case thermal impedance (IGBT) Junction temperature Storage temperature Notes: 1.