RJP60F7DPK
Key Features
- Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ
- (at IC = 50 A, VGE = 15 V, Ta = 25°C) Trench gate and thin wafer technology High speed switching tf = 74 ns typ
- Part: RJP60F7DPK
- Description: IGBT
- Manufacturer: Renesas
- Size: 200.97 KB