RJP60F7DPK Description
Preliminary Datasheet RJP60F7DPK 600V - 50A - IGBT High Speed Power Switching R07DS1001EJ0100 Rev.1.00 Jan 22,.
RJP60F7DPK Key Features
- Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)
- Trench gate and thin wafer technology
- High speed switching