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RJP60F0DPM - N-Channel IGBT

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Renesas

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RJP60F0DPM N-Channel IGBT by Renesas - Datasheet Preview — Datasheet preview – RJP60F0DPM

Datasheet Details

Part number	RJP60F0DPM
Manufacturer	Renesas
File Size	140.96 KB
Description	N-Channel IGBT
Datasheet	RJP60F0DPM Datasheet
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Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C).
Trench gate and thin wafer technology.
High speed switching R07DS0585EJ0100 Rev.1.00 Nov 25, 2011 Outline.

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Published: May 2, 2012 |