RJP60F0DPM Description
Preliminary Datasheet RJP60F0DPM 600 V - 25 A - IGBT High Speed Power Switching.
RJP60F0DPM Key Features
- Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)
- Trench gate and thin wafer technology
- High speed switching R07DS0585EJ0100 Rev.1.00 Nov 25, 2011