Datasheet4U Logo Datasheet4U.com

RJP60F4DPM - N-Channel IGBT

Datasheet Summary

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.

Features

  • Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C).
  • Trench gate and thin wafer technology.
  • High speed switching R07DS0586EJ0100 Rev.1.00 Nov 25, 2011 Outline.

📥 Download Datasheet

Datasheet preview – RJP60F4DPM

Datasheet Details

Part number RJP60F4DPM
Manufacturer Renesas
File Size 140.50 KB
Description N-Channel IGBT
Datasheet download datasheet RJP60F4DPM Datasheet
Additional preview pages of the RJP60F4DPM datasheet.

📁 Similar Datasheet

Other Datasheets by Renesas

Full PDF Text Transcription

Click to expand full text
Preliminary Datasheet RJP60F4DPM 600 V - 30 A - IGBT High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology  High speed switching R07DS0586EJ0100 Rev.1.00 Nov 25, 2011 Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C G 1. Gate 2. Collector 3. Emitter E 1 2 3 www.DataSheet.co.kr Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25 °C Tc = 100 °C Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. Pulse width limited by safe operating area.
Published: |