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RJP60F4DPM Datasheet N-channel IGBT

Manufacturer: Renesas

Overview: Preliminary Datasheet RJP60F4DPM 600 V - 30 A - IGBT High Speed Power.

Key Features

  • Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C).
  • Trench gate and thin wafer technology.
  • High speed switching R07DS0586EJ0100 Rev.1.00 Nov 25, 2011 Outline.

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