Datasheet4U Logo Datasheet4U.com

RJP60F5DPM Datasheet N-channel IGBT

Manufacturer: Renesas

Overview: Preliminary Datasheet RJP60F5DPM 600 V - 40 A - IGBT High Speed Power.

Key Features

  • Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C).
  • Trench gate and thin wafer technology.
  • High speed switching R07DS0587EJ0100 Rev.1.00 Nov 25, 2011 Outline.

RJP60F5DPM Distributor