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RJP60V0DPM-80 Datasheet, Renesas

RJP60V0DPM-80 igbt equivalent, igbt.

RJP60V0DPM-80 Avg. rating / M : 1.0 rating-18

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RJP60V0DPM-80 Datasheet

Features and benefits


* High breakdown-voltage
* Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)
* Short circuit withstand t.

Application

for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; .

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RJP60V0DPM-80 Page 1 RJP60V0DPM-80 Page 2 RJP60V0DPM-80 Page 3

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