RJP60V0DPM Datasheet N-Channel IGBT

Manufacturer: Renesas

Datasheet Details

Preliminary Datasheet RJP60V0DPM 600V - 22A - IGBT Application:.

High breakdown-voltage.
Low Collector to Emitter saturation Voltage VCE(sat) = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C).
Short circuit withstand time (6 s typ. ).
Trench gate and thin wafer technology (G6H series) R07DS0669EJ0100 Rev.1.00 Feb 07, 2012 Outline.