RJP60V0DPM
RJP60V0DPM is N-Channel IGBT manufactured by Renesas.
Preliminary Datasheet
600V
- 22A
- IGBT Application: Inverter
Features
- High breakdown-voltage
- Low Collector to Emitter saturation Voltage VCE(sat) = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)
- Short circuit withstand time (6 s typ.)
- Trench gate and thin wafer technology (G6H series) R07DS0669EJ0100 Rev.1.00 Feb 07, 2012
Outline
RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM)
1. Gate 2. Collector 3. Emitter
E 1 2
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