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RJP60V0DPM-80 Datasheet IGBT

Manufacturer: Renesas

Overview

RJP60V0DPM-80 600V - 22A - IGBT Application: Inverter.

Key Features

  • High breakdown-voltage.
  • Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C).
  • Short circuit withstand time (6 μs typ. ).
  • Trench gate and thin wafer technology (G6H series) Outline.