RJP63K2DPP-M0 Datasheet | Renesas

Preliminary Datasheet Silicon N Channel IGBT High Speed Power Switching Features - - - - - Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ High speed switching: tr = 60 ns typ, tf = 200 ns typ. Low leak current: ICES = 1 A max Isolated package TO-220FL R07DS0468EJ0200 Rev.2.00 Jun 15, 2011 Outline RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL) 1. Gate 2. Collector 3. Emitter 2 3 .DataSheet.co.kr...