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RQK0608BQDQS - N-Channel MOSFET

Key Features

  • Low on-resistance RDS(on) = 120 mΩ typ. (at VGS = 4.5 V, ID = 1.6 A).
  • Low drive current.
  • High speed switching.
  • VDSS : 60 V and capable of 2.5 V gate drive Outline.

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RQK0608BQDQS Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 120 mΩ typ.(at VGS = 4.5 V, ID = 1.6 A) • Low drive current • High speed switching • VDSS : 60 V and capable of 2.5 V gate drive Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 1 2 3 4 1G Note: Marking is “BQ“. REJ03G1621-0100 Rev.1.00 Mar 03, 2008 2, 4 D 1. Gate 2. Drain 3. Source 4. Drain S 3 Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation VDSS VGSS ID ID(pulse) Note1 IDR Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2.