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RQK0608BQDQS Datasheet N-channel MOSFET

Manufacturer: Renesas

Overview: RQK0608BQDQS Silicon N Channel MOS FET Power Switching.

Key Features

  • Low on-resistance RDS(on) = 120 mΩ typ. (at VGS = 4.5 V, ID = 1.6 A).
  • Low drive current.
  • High speed switching.
  • VDSS : 60 V and capable of 2.5 V gate drive Outline.

RQK0608BQDQS Distributor

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