900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Renesas Electronics Components Datasheet

RQK0608BQDQS Datasheet

Silicon N-Channel MOS FET

No Preview Available !

RQK0608BQDQS
Silicon N Channel MOS FET
Power Switching
Features
Low on-resistance
RDS(on) = 120 mtyp.(at VGS = 4.5 V, ID = 1.6 A)
Low drive current
High speed switching
VDSS : 60 V and capable of 2.5 V gate drive
Outline
RENESAS package code: PLZZ0004CA-A
(Package name: UPAK R )
1
2
3
4
1G
Note: Marking is “BQ“.
REJ03G1621-0100
Rev.1.00
Mar 03, 2008
2, 4
D
1. Gate
2. Drain
3. Source
4. Drain
S
3
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
VDSS
VGSS
ID
ID(pulse) Note1
IDR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 µs, Duty cycle 1%
2. When using the glass epoxy board (FR-4 40 × 40 × 1 mm)
Ratings
60
±12
3.2
10
3.2
1.5
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
REJ03G1621-0100 Rev.1.00 Mar 03, 2008
Page 1 of 7


Renesas Electronics Components Datasheet

RQK0608BQDQS Datasheet

Silicon N-Channel MOS FET

No Preview Available !

RQK0608BQDQS
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max Unit
Test conditions
Drain to source breakdown voltage V(BR)DSS
60
V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS +12
V IG = +100 µA, VDS = 0
Gate to source breakdown voltage V(BR)GSS –12
V IG = –100 µA, VDS = 0
Gate to source leak current
IGSS
— +10 µA VGS = +10 V, VDS = 0
Gate to source leak current
IGSS
— –10 µA VGS = –10 V, VDS = 0
Zero gate voltage drain current
IDSS
1
µA VDS = 60 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
0.4
1.4
V VDS = 10 V, ID = 1 mA
Drain to source on state resistance
RDS(on)
120 155 mID = 1.6 A, VGS = 4.5 V Note3
Drain to source on state resistance
RDS(on)
140 195 mID = 1.6 A, VGS = 2.5 V Note3
Forward transfer admittance
|yfs| 5 7.5 — S ID = 1.6 A, VDS = 10 V Note3
Input capacitance
Ciss — 300 —
pF VDS = 10 V
Output capacitance
Coss
36
pF VGS = 0
Reverse transfer capacitance
Crss
20
pF f = 1 MHz
Turn - on delay time
Rise time
Turn - off delay time
Fall time
td(on)
12
ns ID = 1.6 A
tr — 64 — ns VGS = 4.5 V
td(off)
32
ns RL = 6.2
tf — 4 — ns Rg = 4.7
Total gate charge
Gate to Source charge
Gate to drain charge
Qg — 3 — nC VDD = 10 V
Qgs — 0.6 — nC VGS = 4.5 V
Qgd — 1 — nC ID = 3.2 A
Body - drain diode forward voltage
VDF
0.8
V IF = 3.2 A, VGS = 0 Note3
Notes: 3. Pulse test
REJ03G1621-0100 Rev.1.00 Mar 03, 2008
Page 2 of 7


Part Number RQK0608BQDQS
Description Silicon N-Channel MOS FET
Maker Renesas
Total Page 8 Pages
PDF Download

RQK0608BQDQS Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 RQK0608BQDQS Silicon N-Channel MOS FET
Renesas





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy