RQK0608BQDQS Description
RQK0608BQDQS Silicon N Channel MOS FET Power Switching.
RQK0608BQDQS Key Features
- Low on-resistance RDS(on) = 120 mΩ typ.(at VGS = 4.5 V, ID = 1.6 A)
- Low drive current
- High speed switching
- VDSS : 60 V and capable of 2.5 V gate drive