UPA677TB Datasheet - Renesas

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

UPA677TB Features

* a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 1.25 ±0.1 2.1 ±0.1 PACKAGE DRAWING (Unit: mm) 0.2 -0 +0.1 0.15 -0.05 +0.1 6 5 4 0 to 0.1 FEATURES

* 2.5 V drive available

* L

UPA677TB General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

UPA677TB Datasheet (209.57 KB)

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UPA677TB

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Renesas ↗

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N-channel mos field effect transistor.
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Cor.

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UPA677TB N-CHANNEL MOS FIELD EFFECT TRANSISTOR Renesas

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UPA677TB Features

UPA677TB General Description

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