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H5N2008P Datasheet - Renesas Technology

Silicon N Channel MOS FET High Speed Power Switching

H5N2008P Features

* Low on-resistance

* Low leakage current www.DataSheet4U.com

* High speed switching Outline TO-3P D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current

H5N2008P Datasheet (150.22 KB)

Preview of H5N2008P PDF

Datasheet Details

Part number:

H5N2008P

Manufacturer:

Renesas ↗ Technology

File Size:

150.22 KB

Description:

Silicon n channel mos fet high speed power switching.

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H5N2008P Silicon Channel MOS FET High Speed Power Switching Renesas Technology

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