H5N2008P - Silicon N Channel MOS FET High Speed Power Switching

Renesas

Key Features

Low on-resistance.
Low leakage current www. DataSheet4U. com.
High speed switching Outline TO-3P D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage.

H5N2008P silicon n channel mos fet high speed power switching by Renesas - Datasheet Preview

Datasheet Details

Part number	H5N2008P
Manufacturer	Renesas
File Size	150.22 KB
Description	Silicon N Channel MOS FET High Speed Power Switching
Datasheet	H5N2008P Datasheet

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H5N2008P Silicon N Channel MOS FET High Speed Power Switching REJ03G0390-0300 Rev.3.00 Nov.24.2004 Features • Low on-resistance • Low leakage current www.DataSheet4U.com • High speed switching Outline TO-3P D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3.