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Renesas Electronics Components Datasheet

H5N2008P Datasheet

Silicon N Channel MOS FET High Speed Power Switching

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H5N2008P
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
Low leakage current
www.DataSheet4U.cHoimgh speed switching
Outline
TO-3P
D
G
S
1
2
3
Absolute Maximum Ratings
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch 150°C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
REJ03G0390-0300
Rev.3.00
Nov.24.2004
1. Gate
2. Drain (Flange)
3. Source
Ratings
200
±30
96
192
96
192
48
153
150
0.833
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.3.00 Nov.24.2004 page 1 of 6


Renesas Electronics Components Datasheet

H5N2008P Datasheet

Silicon N Channel MOS FET High Speed Power Switching

No Preview Available !

H5N2008P
Electrical Characteristics
Item
Drain to Source breakdown voltage
Zero Gate voltage Drain current
Gate to Source leak current
Gate to Source cutoff voltage
Forward transfer admittance
Static Drain to Source on state
resistance
Input capacitance
Output capacitance
www.DataSheetR4Ue.vceormse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate charge
Gate to Source charge
Gate to Drain charge
Body-Drain diode forward voltage
Body-Drain diode reverse recovery time
Body-Drain diode reverse recovery
charge
Notes: 4. Pulse test
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|yfs|
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
trr
Qrr
Min
200
3.0
35
Typ
58
0.020
Max
1
±0.1
4.5
0.023
Unit
V
µA
µA
V
S
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
VDS = 200 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 48 A, VDS = 10 V Note4
ID = 48 A, VGS = 10 VNote4
4900 — pF VDS = 25 V
850 — pF VGS = 0
95 — pF f = 1 MHz
60 — ns ID = 48 A
370 — ns VGS = 10 V
220 — ns RL = 2.1
270 — ns Rg = 10
98 — nC VDD = 160 V
25 — nC VGS = 10 V
44 — nC ID = 96 A
1.1 1.7 V IF = 96 A, VGS = 0 Note4
180 — ns IF = 96 A, VGS = 0
1.5 — µC diF/dt = 100 A/µs
Rev.3.00 Nov.24.2004 page 2 of 6


Part Number H5N2008P
Description Silicon N Channel MOS FET High Speed Power Switching
Maker Renesas Technology
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