Click to expand full text
HAT1065T
Silicon P Channel MOS FET High Speed Power Switching
Features
• Low on-resistance • Capable of –4 V gate drive • High density mounting
Outline
RENESAS Package code: PTSP0008JB-B (Package name: TSSOP-8 )
87 6 5
123 4
REJ03G0161-0200 Rev.2.00
Aug 06, 2007
1
8
D
D
4
5
G
G
S3
MOS1
S6
MOS2
1, 8 Drain 3, 6 Source 4, 5 Gate 2, 7 NC
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
VDSS
–200
Gate to source voltage
VGSS
±15
Drain current Drain peak current
ID ID(pulse)Note1
–0.25 –1
Body-drain diode reverse drain current Channel dissipation Channel dissipation
IDR Pch Note2 Pch Note3
–0.25 1 1.5
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2.
HAT1065T Datasheet
