HAT2204C
Key Features
- Low on-resistance RDS(on) = 26m Ω typ.(at VGS = 4.5 V)
- Low drive current
- High density mounting
- 1.8 V gate drive device
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| HAT2201RJ | VBsemi | N-Channel 100V MOSFET |