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Renesas Electronics Components Datasheet

HAT2215R Datasheet

Silicon N Channel Power MOS FET High Speed Power Switching

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HAT2215R, HAT2215RJ
Silicon N Channel Power MOS FET
High Speed Power Switching
Features
Low on-resistance
Capable of 4.5 V gate drive
High density mounting
www.DataSheet4U.com
REJ03G0486-0300
Rev.3.00
Dec.22.2004
Outline
SOP-8
2
G
78
DD
4
G
S1
MOS1
56
DD
S3
MOS2
8 7 65
1 234
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
HAT2215R
HAT2215RJ
Drain to source voltage
Gate to source voltage
VDSS
VGSS
80
±20
80
±20
Drain current
Drain peak current
ID
ID(pulse)Note1
3.4
20.4
3.4
20.4
Reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel dissipation
IDR
IAP Note 2
EAR Note 2
Pch Note3
Pch Note4
3.4
1.5
2.2
3.4
3.4
1.54
1.5
2.2
Channel temperature Tch 150
150
Storage temperature
Tstg
–55 to +150
–55 to +150
Notes: 1. PW 10 µs, duty cycle 1 %
2. Value at Tch = 25°C, Rg 50
3. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s
4. 2 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
W
°C
°C
Rev.3.00 Dec. 22, 2004 page 1 of 7


Renesas Electronics Components Datasheet

HAT2215R Datasheet

Silicon N Channel Power MOS FET High Speed Power Switching

No Preview Available !

HAT2215R, HAT2215RJ
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Zero gate voltage
drain current
HAT2215R
HAT2215RJ
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Notes: 5. Pulse test
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
IDSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
80
±20
1.0
4.2
Typ
88
100
7.0
400
57
24
7.3
1.1
1.3
6.0
4.0
39
3.5
0.83
30
Max
±10
1
10
2.5
115
145
1.08
Unit
V
V
µA
µA
µA
µA
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
www.DataSheet4U.com
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VGS = 0
VGS = ±16 V, VDS = 0
VDS = 80 V, VGS = 0
VDS = 64 V, VGS = 0
Ta = 125°C
VDS = 10 V, ID = 1 mA
ID = 1.7 A, VGS = 10 V Note5
ID = 1.7 A, VGS = 4.5 V Note5
ID = 1.7 A, VDS = 10 V Note5
VDS = 10 V
VGS = 0
f = 1MHz
VDD = 25 V
VGS = 10 V
ID = 3.4 A
VGS =10 V, ID = 1.7 A
VDD 30 V
RL = 17.6
Rg = 4.7
IF = 3.4 A, VGS = 0 Note5
IF =3.4 A, VGS = 0
diF/ dt = 100 A/µs
Rev.3.00 Dec. 22, 2004 page 2 of 7


Part Number HAT2215R
Description Silicon N Channel Power MOS FET High Speed Power Switching
Maker Renesas Technology
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HAT2215R Datasheet PDF






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