HAT2282C - Silicon N-Channel Power MOSFET

Renesas

Key Features

Low on-resistance RDS(on) = 173 mΩ typ. (at VGS = 4.5 V).
Low drive current.
High density mounting.
2.5 V gate drive device Outline.

HAT2282C silicon n-channel power mosfet by Renesas - Datasheet Preview

Datasheet Details

Part number	HAT2282C
Manufacturer	Renesas
File Size	73.62 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	HAT2282C Datasheet

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HAT2282C Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 173 mΩ typ.(at VGS = 4.5 V) • Low drive current • High density mounting • 2.5 V gate drive device Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 3 2 1 REJ03G1329-0100 Rev.1.00 Jan 26, 2006 23 45 DD DD 6 G S 1 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate Absolute Maximum Ratings Item Symbol Drain to Source voltage VDSS Gate to Source voltage VGSS Drain current Drain peak current ID ID Note1 (pulse) Body - Drain diode reverse Drain current Channel dissipation IDR Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 × 40 × 1.