HAT2282C
HAT2282C is Silicon N-Channel Power MOSFET manufactured by Renesas.
Features
- Low on-resistance RDS(on) = 173 mΩ typ.(at VGS = 4.5 V)
- Low drive current
- High density mounting
- 2.5 V gate drive device
Outline
RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6)
Indexband 6
3 2 1
REJ03G1329-0100 Rev.1.00
Jan 26, 2006
23 45 DD DD
6 G
S 1
1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate
Absolute Maximum Ratings
Item
Symbol
Drain to Source voltage
VDSS
Gate to Source voltage
VGSS
Drain current Drain peak current
Note1 (pulse)
Body
- Drain diode reverse Drain current Channel dissipation
IDR Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR4 40 × 40 × 1.6mm)
Ratings 60 ±12 1.5 6 1.5 830 150
- 55 to +150
(Ta =...
