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Renesas Electronics Components Datasheet

HAT2282C Datasheet

Silicon N Channel MOS FET Power Switching

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HAT2282C
Silicon N Channel MOS FET
Power Switching
Features
Low on-resistance
RDS(on) = 173 mtyp.(at VGS = 4.5 V)
Low drive current
High density mounting
2.5 V gate drive device
Outline
RENESAS Package code: PWSF0006JA-A
(Package name: CMFPAK-6)
Indexband
6
5
4
3
2
1
www.DataSheet4U.com
REJ03G1329-0100
Rev.1.00
Jan 26, 2006
23 45
DD DD
6
G
S
1
1. Source
2. Drain
3. Drain
4. Drain
5. Drain
6. Gate
Absolute Maximum Ratings
Item
Symbol
Drain to Source voltage
VDSS
Gate to Source voltage
VGSS
Drain current
Drain peak current
ID
ID
Note1
(pulse)
Body - Drain diode reverse Drain current
Channel dissipation
IDR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 µs, duty cycle 1%
2. When using the glass epoxy board (FR4 40 × 40 × 1.6mm)
Ratings
60
±12
1.5
6
1.5
830
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
mW
°C
°C
Rev.1.00 Jan 26, 2006 page 1 of 6


Renesas Electronics Components Datasheet

HAT2282C Datasheet

Silicon N Channel MOS FET Power Switching

No Preview Available !

HAT2282C
Electrical Characteristics
www.DataSheet4U.com
(Ta = 25°C)
Item
Symbol Min Typ Max Unit
Test conditions
Drain to Source breakdown voltage V(BR)DSS 60
V ID = 10 mA, VGS = 0
Gate to Source breakdown voltage V(BR)GSS ±12
IG = ±100 µA, VDS = 0
Gate to Source leak current
IGSS
±10 µA VGS = ±10 V, VDS = 0
Drain to Source leak current
IDSS
1
µA VDS = 60 V, VGS = 0
Gate to Source cutoff voltage
VGS(off)
0.4
1.4
V VDS = 10 V, ID = 1 mA
Drain to Source on state resistance RDS(on)
173 225 mID = 0.8 A, VGS = 4.5 VNote3
RDS(on)
207 290 mID = 0.8 A, VGS = 2.5 VNote3
Forward transfer admittance
|yfs| 2.3 3.5 —
S ID = 0.8 A, VDS = 10 V Note3
Input capacitance
Ciss — 200 —
pF VDS = 10 V, VGS = 0,
Output capacitance
Coss
25
pF f = 1 MHz
Reverse transfer capacitance
Crss
15
pF
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Total Gate charge
Gate to Source charge
td(on)
10
ns ID = 0.8 A
tr — 26 — ns VGS = 4.5 V, VDD = 10 V
td(off)
30
ns RL = 1.25 , Rg = 4.7
tf — 4 — ns
Qg — 2.4 — nC VDD = 10 V, VGS = 4.5 V
Qgs — 0.4 — nC ID = 1.5 A
Gate to Drain charge
Qgd — 0.6 — nC
Body - Drain diode forward voltage
VDF
0.8 1.1
V IF = 1.5 A, VGS = 0 Note3
Notes: 3. Pulse test
Rev.1.00 Jan 26, 2006 page 2 of 6


Part Number HAT2282C
Description Silicon N Channel MOS FET Power Switching
Maker Renesas Technology
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