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K4150 - 2SK4150

General Description

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Key Features

  • Capable of 2.5 V gate drive.
  • Low drive current.
  • Low on-resistance RDS(on) = 4.0  typ. (at ID = 0.2 A, VGS = 4 V, Ta = 25°C) Outline.

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Full PDF Text Transcription (Reference)

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2SK4150 Silicon N Channel MOS FET High Speed Power Switching Features  Capable of 2.5 V gate drive  Low drive current  Low on-resistance RDS(on) = 4.0  typ. (at ID = 0.2 A, VGS = 4 V, Ta = 25°C) Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92(1)) 321 G Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% Symbol VDSS VGSS ID ID Note1 (pulse) IDR IDR Note1 (pulse) Pch ch-a Tch Tstg Preliminary Datasheet REJ03G1909-0300 Rev.3.00 May 27, 2010 D 1. Source 2. Drain 3.