K4150 - 2SK4150

Datasheet Summary

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

the incorporation of these circuits, software, and information in the design of your equipment.

Features

Capable of 2.5 V gate drive.
Low drive current.
Low on-resistance RDS(on) = 4.0  typ. (at ID = 0.2 A, VGS = 4 V, Ta = 25°C) Outline.

Renesas Technology

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Datasheet Details

Part number	K4150
Manufacturer	Renesas Technology
File Size	77.32 KB
Description	2SK4150
Datasheet	K4150 Datasheet
Additional preview pages of the K4150 datasheet.

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2SK4150 Silicon N Channel MOS FET High Speed Power Switching Features  Capable of 2.5 V gate drive  Low drive current  Low on-resistance RDS(on) = 4.0  typ. (at ID = 0.2 A, VGS = 4 V, Ta = 25°C) Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92(1)) 321 G Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% Symbol VDSS VGSS ID ID Note1 (pulse) IDR IDR Note1 (pulse) Pch ch-a Tch Tstg Preliminary Datasheet REJ03G1909-0300 Rev.3.00 May 27, 2010 D 1. Source 2. Drain 3.

Published: Jul 28, 2015 |