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K4108 2SK4108

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Description

2SK4108 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI) 2SK4108 Switching Regulator Applications Unit: mm z Low drain .

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Applications

* Unit: mm z Low drain
* source ON resistance : RDS (ON) = 0. 21Ω (typ. ) z High forward transfer admittance : |Yfs| = 14 S (typ. ) z Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C)

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K4108 2SK4108 Toshiba Semiconductor
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