K4113 Field Effect Transistor Silicon N Channel MOS Type

Toshiba

Description

2SK4113 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIV) 2SK4113 Switching Regulator Applications Unit: mm * Low drain-.

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Datasheet Specifications

Part number: K4113
Manufacturer: Toshiba ↗
File Size: 210.29 KB
Datasheet: K4113-Toshiba.pdf
Description: Field Effect Transistor Silicon N Channel MOS Type

Applications

* Unit: mm
* Low drain-source ON resistance: RDS (ON) = 2.0 (typ. )
* High forward transfer admittance: |Yfs| = 4.5 S (typ. )
* Low leakage current: IDSS = 100 A (VDS = 720 V)
* Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25

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K4113 Field Effect Transistor Silicon Channel MOS Type Toshiba

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