K4112 Datasheet - Toshiba

K4112 Field Effect Transistor

2SK4112 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4112 Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 0.75 (typ.) High forward transfer admittance: |Yfs| = 5.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate volta.

K4112 Datasheet (206.95 KB)