K4112 Field Effect Transistor

Toshiba

Description

2SK4112 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4112 Switching Regulator Applications * Low drain-source ON r.

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Datasheet Specifications

Part number: K4112
Manufacturer: Toshiba ↗
File Size: 206.95 KB
Datasheet: K4112-Toshiba.pdf
Description: Field Effect Transistor

Applications

* Low drain-source ON resistance: RDS (ON) = 0.75 (typ. )
* High forward transfer admittance: |Yfs| = 5.5S (typ. )
* Low leakage current: IDSS = 100 A (VDS = 600 V)
* Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°

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K4112 Field Effect Transistor Toshiba

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