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K4110 Datasheet - Toshiba

K4110 - 2SK4110

2SK4110 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4110 Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 0.9 Ω (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gat

K4110 Features

* s. Do not use Product for Unintende

K4110-Toshiba.pdf

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Datasheet Details

Part number:

K4110

Manufacturer:

Toshiba ↗

File Size:

195.76 KB

Description:

2sk4110.

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