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K4107 2SK4107

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Description

2SK4107 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI) 2SK4107 ○ Switching Regulator Applications Unit: mm * Low dra.

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Applications

* Unit: mm
* Low drain
* source ON resistance : RDS (ON) = 0. 33 Ω (typ. )
* High forward transfer admittance : |Yfs| = 8.5 S (typ. )
* Low leakage current : IDSS = 100 μA (max) (VDS = 500 V)
* Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolut

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K4107 2SK4107 Toshiba Semiconductor
Toshiba Semiconductor K4107-like datasheet
K4108
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