K4107 Datasheet - Toshiba Semiconductor

K4107 2SK4107

2SK4107 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI) 2SK4107 ○ Switching Regulator Applications Unit: mm Low drain source ON resistance : RDS (ON) = 0. 33 Ω (typ.) High forward transfer admittance : |Yfs| = 8.5 S (typ.) Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain .

K4107_ToshibaSemiconductor.pdf