R1LV0416CSB-5SI Datasheet - Renesas Technology

4M SRAM

R1LV0416CSB-5SI Features

* Single 2.5 V and 3.0 V supply: 2.2 V to 3.6 V

* Fast access time: 55/70 ns (max)

* Power dissipation:  Active: 5.0 mW/MHz (typ)(VCC = 2.5 V) : 6.0 mW/MHz (typ) (VCC = 3.0 V)  Standby: 1.25 µW (typ) (VCC = 2.5 V) : 1.5 µW (typ) (VCC = 3.0 V)

* Completely static mem

R1LV0416CSB-5SI General Description

The R1LV0416C-I is a 4-Mbit static RAM organized 256-kword × 16-bit. R1LV0416C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The R1LV0416C-I Series offers low power standby power dissipation; theref.

R1LV0416CSB-5SI Datasheet (96.01 KB)