RJE0605JPD
Overview
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area.
- Logic level operation (-6 V Gate drive). Built-in the over temperature shut-down circuit. High endurance capability against to the short circuit. Latch type shut down operation (need 0 voltage recovery). Built-in the current limitation circuit. Low on-resistance RDS(on): 58 m Typ, 75 m Max (VGS = -10 V) Outline RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) )
- Drain
- Source
- Drain G Gate Resistor Temperature Sensing Circuit Latch Circuit Gate Shut-down Circuit 1 Current Limitation Circuit 2 3 S
