RJE0605JPD - Silicon P Channel MOS FET Series Power Switching

Renesas Technology

Datasheet Details

This FET has the over temperature shut-down capability sensing to the junction temperature..

Logic level operation (.
6 V Gate drive). Built-in the over temperature shut-down circuit. High endurance capability against to the short circuit. Latch type shut down operation (need 0 voltage recovery). Built-in the current limitation circuit. Low on-resistance RDS(on): 58 m Typ, 75 m Max (VGS =.
10 V) Outline.

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