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RJE0615JSP Datasheet P-channel MOSFET

Manufacturer: Renesas

Overview: Preliminary Datasheet RJE0615JSP Silicon P Channel MOS FET Series Power.

General Description

R07DS0124EJ0200 (Previous: REJ03G1943-0100) Rev.2.00 Sep 01, 2010 This FET has the over temperature shut-down capability sensing to the junction temperature.

This FET has the built-in over temperature shut-down circuit in the gate area.

And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..

Key Features

  • Built-in the over temperature shut-down circuit. High endurance capability against to the short circuit. Latch type shut down operation (need 0 voltage recovery). Built-in the current limitation circuit. Low on-resistance RDS(on) : 53 mī— Typ, 65 mī— Max (VGS =.
  • 10 V) High density mounting Outline.

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