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RJE0616JSP - P-Channel MOSFET

General Description

This FET has the over temperature shut-down capability sensing to the junction temperature.

This FET has the built-in over temperature shut-down circuit in the gate area.

Key Features

  • For Automotive.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RJE0616JSP -60V, -4A Silicon P Channel Thermal FET Power Switching Preliminary Datasheet R07DS1234EJ0200 (Previous: REJ03G1944-0100) Rev.2.00 Oct 27, 2014 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. Features • For Automotive applications • Built-in the over temperature shut-down circuit. • High endurance capability against to the short circuit. • Latch type shut down operation (need 0 voltage recovery). • Built-in the current limitation circuit.