RJE0609JPD Key Features
- Logic level operation (-6 V Gate drive). Built-in the over temperature shut-down circuit. High endurance capability agai
- Part: RJE0609JPD
- Manufacturer: Renesas (official site)
- Size: 105.20 KB
Related Renesas Datasheets
| Part Number | Description |
|---|---|
| RJE0601JPE | Silicon P Channel MOS FET Series Power Switching |
| RJE0603JPE | Silicon P Channel MOS FET Series Power Switching |
| RJE0605JPD | Silicon P Channel MOS FET Series Power Switching |
| RJE0607JSP | P-Channel MOSFET |
| RJE0615JSP | P-Channel MOSFET |
RJE0609JPD Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..