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Renesas Electronics Components Datasheet

RJE0616JSP Datasheet

P-Channel MOSFET

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RJE0616JSP
-60V, -4A Silicon P Channel Thermal FET
Power Switching
Preliminary Datasheet
R07DS1234EJ0200
(Previous: REJ03G1944-0100)
Rev.2.00
Oct 27, 2014
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
For Automotive applications
Built-in the over temperature shut-down circuit.
High endurance capability against to the short circuit.
Latch type shut down operation (need 0 voltage recovery).
Built-in the current limitation circuit.
Low on-resistance RDS(on) : 77 mΩ Typ, 90 mΩ Max (VGS = –10 V)
High density mounting
AEC-Q101 compliant
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8)
8 7 65
1 234
4
G
Gate Resistor
Current
Limitation
Circuit
Temperature
Sensing
Circuit
Latch
Circuit
Gate
Shut-down
Circuit
DDDD
5678
1, 2, 3
4
5, 6, 7, 8
Source
Gate
Drain
123
SSS
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
Gate to source voltage
Drain current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
VGSS
ID Note3
IDR
IAP Note 2
EAR Note 2
Pch Note 1
–60
–16
2.5
–4
–4
–4
68.6
2.5
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1 When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW 10 s
2. Tch = 25°C, Rg 50 Ω
3. It provides by the current limitation lower bound value.
(Ta = 25°C)
Unit
V
V
V
A
A
A
mJ
W
°C
°C
R07DS1234EJ0200 Rev.2.00
Oct 27, 2014
Page 1 of 7


Renesas Electronics Components Datasheet

RJE0616JSP Datasheet

P-Channel MOSFET

No Preview Available !

RJE0616JSP
Preliminary
Typical Operation Characteristics
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Drain current
(Current limitation value)
Notes; 4. Pulse test
Symbol
VIH
VIL
IIH1
IIH2
IIL
IIH(sd)1
IIH(sd)2
Tsd
Min
–3.5
Vop
ID limt
–3.5
–4
Typ
–0.8
–0.35
175
Max
–1.2
–100
–50
–1
–12
Unit
V
V
μA
μA
μA
mA
mA
°C
V
A
(Ta = 25°C)
Test Conditions
Vi = –8 V, VDS = 0
Vi = –3.5 V, VDS = 0
Vi = –1.2 V, VDS = 0
Vi = –8 V, VDS = 0
Vi = –3.5 V, VDS = 0
Channel temperature
(dv/dt VGS 500 V/ms)
VGS = –12 V, VDS = –10 V Note 4
Electrical Characteristics
Item
Symbol Min
Drain current
ID1
ID2
ID3
–4
Drain to source breakdown
voltage
V(BR)DSS
–60
Gate to source breakdown
voltage
V(BR)GSS
V(BR)GSS
–16
2.5
Gate to source leak current
IGSS1
IGSS2
IGSS3
IGSS4
Input current (shut down)
IGS(OP)1
IGS(OP)2
Zero gate voltage drain current
IDSS1
Zero gate voltage drain current
IDSS2
Typ
–0.8
–0.35
Max
–4
–10
–100
–50
–1
100
–10
–10
Unit
A
mA
A
V
V
V
μA
μA
μA
μA
mA
mA
μA
μA
Gate to source cutoff voltage
VGS(off)
–2.2
–3.4
V
Static drain to source on state
RDS(on)
102
150
mΩ
resistance
RDS(on)
77
90
mΩ
Output capacitance
Coss
290
pF
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward
voltage
td(on)
3.20
μs
tr
2.80
μs
td(off)
1.55
μs
tf
1.05
μs
VDF
–0.84
V
Body-drain diode reverse
recovery time
trr
84
ns
Over load shut down
operation time Note 6
tos1
6.34
ms
Notes: 5. Pulse test
6. Including the junction temperature rise of the over loaded condition.
(Ta = 25°C)
Test Conditions
VGS = –3.5 V, VDS = –10 V
VGS = –1.2 V, VDS = –10 V
VGS = –12 V, VDS = –10 V Note 5
ID = –10 mA, VGS = 0
IG = –800 μA, VDS = 0
IG = 100 μA, VDS = 0
VGS = –8 V, VDS = 0
VGS = –3.5 V, VDS = 0
VGS = –1.2 V, VDS = 0
VGS = 2.4 V, VDS = 0
VGS = –8 V, VDS = 0
VGS = –3.5 V, VDS = 0
VDS = –60 V, VGS = 0
VDS = –48 V, VGS = 0,
Ta = 125°C
VDS = –10 V, ID = –1 mA
ID = –2 A, VGS = –6 V Note 5
ID = –2 A, VGS = –10 V Note 5
VDS = –10 V, VGS = 0, f = 1MHz
VGS = –10 V, ID= –2 A,
RL = 15 Ω
IF = –4 A, VGS = 0
IF = –4 A, VGS = 0
diF/dt = 50 A/μs
VGS = –5 V, VDD = –16 V
R07DS1234EJ0200 Rev.2.00
Oct 27, 2014
Page 2 of 7


Part Number RJE0616JSP
Description P-Channel MOSFET
Maker Renesas Technology
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