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Renesas Electronics Components Datasheet

RJH60F0DPK Datasheet

Silicon N Channel IGBT

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RJH60F0DPK
Silicon N Channel IGBT
High Speed Power Switching
Features
High speed switching
Low on-state voltage
Fast recovery diode
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
4
C
12 3
G
E
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100°C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Channel temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW 5 μs, duty cycle 1%
3. Value at Tc = 25°C
Symbol
VCES
VGES
IC Note1
IC Note1
ic(peak) Note1
iDF(peak) Note2
PC Note3
Tj
Tstg
Preliminary
www.DataSheet4U.com
REJ03G1834-0100
Rev.1.00
Oct 13, 2009
1. Gate
2. Collector
3. Emitter
4. Collector (Flange)
Ratings
600
±30
50
25
100
100
201.6
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
A
W
°C
°C
REJ03G1834-0100 Rev.1.00 Oct 13, 2009
Page 1 of 3


Renesas Electronics Components Datasheet

RJH60F0DPK Datasheet

Silicon N Channel IGBT

No Preview Available !

RJH60F0DPK
Preliminary
Electrical Characteristics
www.DataSheet4U.com
(Tj = 25°C)
Item
Symbol Min Typ Max Unit
Test Conditions
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
ICES
IGES
VGE(off)
VCE(sat)
Switching time
tf
4
— 100 μA VCE = 600V, VGE = 0
— ±1 μA VGE = ±30 V, VCE = 0
— 8 V VCE = 10V, IC = 1 mA
1.4 1.82 V IC = 25 A, VGE = 15V Note4
1.7 — V IC = 50 A, VGE = 15V Note4
90 — ns IC = 30 A, Resistive Load
VCC = 300 V
VGE = 15 V
Rg = 5 Ω Note4
C-E diode forward voltage
C-E diode forward voltage
C-E diode reverse recovery time
Notes: 4. Pulse test
VECF1
VECF2
1.6 2.1
1.8 —
V IF = 20 A Note4
V IF = 40 A Note4
trr — 140 — ns IF = 20 A
diF/dt = 100 A/μs
REJ03G1834-0100 Rev.1.00 Oct 13, 2009
Page 2 of 3


Part Number RJH60F0DPK
Description Silicon N Channel IGBT
Maker Renesas Technology
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RJH60F0DPK Datasheet PDF






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