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Renesas Electronics Components Datasheet

RJH60F4DPK Datasheet

Silicon N Channel IGBT

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RJH60F4DPK
Silicon N Channel IGBT
High Speed Power Switching
Features
High speed switching
Low on-state voltage
Fast recovery diode
Outline
Preliminary
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REJ03G1835-0100
Rev.1.00
Oct 13, 2009
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
4
C
12 3
1. Gate
2. Collector
G 3. Emitter
4. Collector (Flange)
E
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW 5 μs, duty cycle 1%
Symbol
VCES
VGES
IC Note1
IC Note1
ic(peak) Note1
iDF(peak) Note2
PC
θj-c
Tj
Tstg
Ratings
600
±30
60
30
120
100
235.8
0.53
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
A
W
°C/W
°C
°C
REJ03G1835-0100 Rev.1.00 Oct 13, 2009
Page 1 of 6


Renesas Electronics Components Datasheet

RJH60F4DPK Datasheet

Silicon N Channel IGBT

No Preview Available !

RJH60F4DPK
Electrical Characteristics
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
C-E diode forward voltage
C-E diode reverse recovery time
Symbol
ICES
IGES
VGE(off)
VCE(sat)
VCE(sat)
Cies
Coes
Cres
td(on)
tr
td(off)
tf
VECF1
VECF2
trr
Notes: 3. Pulse test
Min
4
Typ
1.4
1.7
1945
93
33
30
32
65
80
1.6
1.8
140
Max
100
±1
8
1.82
2.1
Preliminary
Unit
μA
μA
V
V
V
pF
pF
pF
ns
ns
ns
ns
V
V
ns
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(Tj = 25°C)
Test Conditions
VCE = 600V, VGE = 0
VGE = ±30 V, VCE = 0
VCE = 10V, IC = 1 mA
IC = 30 A, VGE = 15V Note3
IC = 60 A, VGE = 15V Note3
VCE = 25 V
VGE = 0 V
f = 1 MHz
IC = 30 A, Resistive Load
VCC = 300V
VGE = 15V
Rg = 5 Ω Note3
IF = 20 A Note3
IF = 40 A Note3
IF = 20 A
diF/dt = 100 A/μs
REJ03G1835-0100 Rev.1.00 Oct 13, 2009
Page 2 of 6


Part Number RJH60F4DPK
Description Silicon N Channel IGBT
Maker Renesas Technology
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