RJH60F6DPK Overview
Key Features
- Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15V, Ta = 25°C)
- Built in fast recovery diode in one package
- Trench gate and thin wafer technology
- Collector (Flange) E 1 2
| Part | RJH60F6DPK |
|---|---|
| Description | Silicon N-Channel IGBT |
| Manufacturer | Renesas |
| Size | 103.47 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| RJH60F6DPQ-A0 | Renesas | High Speed Power Switching |
| RJH60F6BDPQ-A0 | Renesas | IGBT |
| RJH60F3DPK | Renesas | High Speed Power Switching |
| RJH60F7DPQ-A0 | Renesas | High Speed Power Switching |
| RJH60F3DPQ-A0 | Renesas | High Speed Power Switching |