900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Renesas Electronics Components Datasheet

RJH60F6DPK Datasheet

Silicon N-Channel IGBT

No Preview Available !

Preliminary Datasheet
RJH60F6DPK
Silicon N Channel IGBT
High Speed Power Switching
REJ03G1940-0100
Rev.1.00
Jun 18, 2010
Features
Low collector to emitter saturation voltage
VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
tf = 95 ns typ. (at IC = 30 A, Resistive Load, VCC = 300 V, VGE = 15 V, Rg = 5 , Ta = 25°C)
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
4
C
1
23
1. Gate
2. Collector
G 3. Emitter
4. Collector (Flange)
E
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction to case thermal impedance (Diode)
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW 5 s, duty cycle 1%
Symbol
VCES
VGES
IC
IC
ic(peak) Note1
iDF(peak) Note2
PC
j-c
j-c
Tj
Tstg
Ratings
600
±30
85
45
170
100
297.6
0.42
2.0
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
A
W
°C/W
°C/W
°C
°C
REJ03G1940-0100 Rev.1.00
Jun 18, 2010
www.DataSheet.in
Page 1 of 6


Renesas Electronics Components Datasheet

RJH60F6DPK Datasheet

Silicon N-Channel IGBT

No Preview Available !

RJH60F6DPK
Preliminary
Electrical Characteristics
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
C-E diode forward voltage
C-E diode reverse recovery time
Symbol
ICES
IGES
VGE(off)
VCE(sat)
Cies
Coes
Cres
td(on)
tf
td(off)
tf
VECF1
VECF2
trr
Notes: 3. Pulse test
Min
4
Typ
1.35
3800
150
65
41
24
91
95
1.6
1.8
140
Max
100
±1
8
1.75
2.1
Unit
A
A
V
V
pF
pF
pF
ns
ns
ns
ns
V
V
ns
(Tj = 25°C)
Test Conditions
VCE = 600V, VGE = 0
VGE = ±30 V, VCE = 0
VCE = 10V, IC = 1 mA
IC = 45 A, VGE = 15V Note3
VCE = 25 V
VGE = 0 V
f = 1 MHz
IC = 30 A, Resistive Load
VCC = 300 V
VGE = 15 V
Rg = 5 Note3
IF = 20 A Note3
IF = 40 A Note3
IF = 20 A
diF/dt = 100 A/s
REJ03G1940-0100 Rev.1.00
Jun 18, 2010
www.DataSheet.in
Page 2 of 6


Part Number RJH60F6DPK
Description Silicon N-Channel IGBT
Maker Renesas Technology
PDF Download

RJH60F6DPK Datasheet PDF





Similar Datasheet

1 RJH60F6DPK Silicon N-Channel IGBT
Renesas Technology
2 RJH60F6DPQ-A0 High Speed Power Switching
Renesas





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy