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RJH60F6DPK - Silicon N-Channel IGBT

General Description

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Key Features

  • Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15V, Ta = 25°C).
  • Built in fast recovery diode in one package.
  • Trench gate and thin wafer technology.
  • High speed switching tf = 95 ns typ. (at IC = 30 A, Resistive Load, VCC = 300 V, VGE = 15 V, Rg = 5 , Ta = 25°C) REJ03G1940-0100 Rev.1.00 Jun 18, 2010 Outline.

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Preliminary Datasheet RJH60F6DPK Silicon N Channel IGBT High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology  High speed switching tf = 95 ns typ. (at IC = 30 A, Resistive Load, VCC = 300 V, VGE = 15 V, Rg = 5 , Ta = 25°C) REJ03G1940-0100 Rev.1.00 Jun 18, 2010 Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 G 1. Gate 2. Collector 3. Emitter 4.