logo

RJH60F6DPK Datasheet, Renesas Technology

RJH60F6DPK igbt equivalent, silicon n-channel igbt.

RJH60F6DPK Avg. rating / M : 1.0 rating-12

datasheet Download

RJH60F6DPK Datasheet

Features and benefits


* Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15V, Ta = 25°C)
* Built in fast recovery diode in one package
* Tren.

Application

or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics.

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and i.

Image gallery

RJH60F6DPK Page 1 RJH60F6DPK Page 2 RJH60F6DPK Page 3

TAGS

RJH60F6DPK
Silicon
N-Channel
IGBT
RJH60F6DPQ-A0
RJH60F6BDPQ-A0
RJH60F0DPK
Renesas Technology

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts