RJK0226DNS fet equivalent, silicon n channel power mos fet.
* High speed switching
* Capable of 4.5 V gate drive
* Low drive current
* High density mounting
* Low on-resistance
RDS(on) = 2.3 m typ. (at VGS = 8.
or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics.
Image gallery
Download