RJK0451DPB fet equivalent, silicon n channel power mos fet.
* High speed switching
* Capable of 4.5 V gate drive
* Low drive current
* High density mounting
* Low on-resistance RDS(on) = 5.5 m typ. (at VGS = .
for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; .
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