RJK0852DPB fet equivalent, silicon n channel power mos fet.
* High speed switching
* Capable of 4.5 V gate drive
* Low drive current
* High density mounting
* Low on-resistance
RDS(on) = 9 m typ. (at VGS = 10.
* Switching Mode Power Supply
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain cu.
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and i.
Image gallery
Download