RJK0852DPB
Key Features
- High speed switching
- Capable of 4.5 V gate drive
- Low drive current
- High density mounting
- Low on-resistance RDS(on) = 9 m typ. (at VGS = 10 V)
- Part: RJK0852DPB
- Description: Silicon N Channel Power MOS FET
- Manufacturer: Renesas
- Size: 100.44 KB