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RJK0853DPB - Silicon N Channel Power MOS FET

General Description

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Key Features

  • High speed switching.
  • Capable of 4.5 V gate drive.
  • Low drive current.
  • High density mounting.
  • Low on-resistance RDS(on) = 6.2 m typ. (at VGS = 10 V).
  • Pb-free.
  • Halogen-free Outline.

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Datasheet Details

Part number RJK0853DPB
Manufacturer Renesas
File Size 100.27 KB
Description Silicon N Channel Power MOS FET
Datasheet download datasheet RJK0853DPB Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RJK0853DPB 80V, 40A, 8.0m max. Silicon N Channel Power MOS FET Power Switching Preliminary Datasheet R07DS0081EJ0300 Rev.3.00 Apr 09, 2013 Features  High speed switching  Capable of 4.5 V gate drive  Low drive current  High density mounting  Low on-resistance RDS(on) = 6.2 m typ. (at VGS = 10 V)  Pb-free  Halogen-free Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 1 234 5 D 4 1, 2, 3 Source G 4 Gate 5 Drain SSS 123 Application  Switching Mode Power Supply Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1.