RJK0853DPB

The RJK0853DPB is Silicon N Channel Power MOS FET designed by Renesas Technology.

Product Overview

Renesas Technology

Datasheet Details

Part number	RJK0853DPB
Manufacturer	Renesas Technology
File Size	100.27 KB
Description	Silicon N Channel Power MOS FET
Datasheet	RJK0853DPB-RenesasTechnology.pdf
Additional preview pages of the RJK0853DPB datasheet.

Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

High speed switching.
Capable of 4.5 V gate drive.
Low drive current.
High density mounting.
Low on-resistance RDS(on) = 6.2 m typ. (at VGS = 10 V).
Pb-free.
Halogen-free Outline.

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Published: Aug 23, 2015 |