RJK2006DPJ - Silicon N Channel MOS FET High Speed Power Switching

Product Overview

Renesas Technology

Part number	RJK2006DPJ
Manufacturer	Renesas Technology
File Size	98.40 KB
Description	Silicon N Channel MOS FET High Speed Power Switching
Datasheet	RJK2006DPJ Datasheet
Note	This datasheet PDF includes multiple part numbers: RJK2006DPJ, RJK2006DPx. Please refer to the document for exact specifications by model.
Additional preview pages of the RJK2006DPJ datasheet.

Low on-resistance.
Low leakage current.
High speed switching Outline LDPAK D 4 4 4 G 1 1 2 3 1 S 3 RJK2006DPE 2 3 RJK2006DPF RJK2006DPJ 2 1. Gate 2. Drain 3. Source 4. Drain Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current www. DataSheet4U. com Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel.

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Published: Dec 1, 2009 |